TF412ST5G Details_TF412ST5G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	1.2 mA @ 10 V
Current Drain (Id) - Max	10 mA
Voltage - Cutoff (VGS off) @ Id	180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	4pF @ 10V
Resistance - RDS(On)	-
Power - Max	100 mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Supplier Device Package	SOT-883 (XDFN3) (1x0.6)

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