CP226V-2N4393-CT20 Details_CP226V-2N4393-CT20 PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	-
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	-
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 20V
Resistance - RDS(On)	100 Ohms
Power - Max	1.8 W
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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