J112G Details_J112G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	35 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	5 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	-
Resistance - RDS(On)	50 Ohms
Power - Max	350 mW
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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