2N4856 Details_2N4856 PDF Document_Microchip Technology-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/385
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	40 V
Current - Drain (Idss) @ Vds (Vgs=0)	175 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	10 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds	18pF @ 10V
Resistance - RDS(On)	25 Ohms
Power - Max	360 mW
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18

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