4392DFN 8L Details_4392DFN 8L PDF Document_Linear Integrated Systems, Inc.-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	400 mV
Current - Drain (Idss) @ Vds (Vgs=0)	-
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	-
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 20V
Resistance - RDS(On)	60 Ohms
Power - Max	300 mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-VFDFN Exposed Pad
Supplier Device Package	8-DFN (2x2)

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