2N5114UB Details_2N5114UB PDF Document_Microchip Technology-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	Military, MIL-PRF-19500
Package	Bulk
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	90 mA @ 18 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	10 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 15V
Resistance - RDS(On)	75 Ohms
Power - Max	500 mW
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

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