LS320 DIE Details_LS320 DIE PDF Document_Linear Integrated Systems, Inc.-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	20 V
Current - Drain (Idss) @ Vds (Vgs=0)	-
Current Drain (Id) - Max	25 mA
Voltage - Cutoff (VGS off) @ Id	-
Input Capacitance (Ciss) (Max) @ Vds	8pF @ 10V
Resistance - RDS(On)	-
Power - Max	200 mW
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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