MMBFJ176 Details_MMBFJ176 PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	2 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	1 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds	-
Resistance - RDS(On)	250 Ohms
Power - Max	225 mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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