CP210-2N4416-CT20 Details_CP210-2N4416-CT20 PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	30 V
Current - Drain (Idss) @ Vds (Vgs=0)	5 mA @ 20 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	6 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds	4pF @ 15V
Resistance - RDS(On)	-
Power - Max	-
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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