2SJ01640RA Details_2SJ01640RA PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	600 µA @ 10 V
Current Drain (Id) - Max	20 mA
Voltage - Cutoff (VGS off) @ Id	1.5 V @ 10 µA
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 10V
Resistance - RDS(On)	300 Ohms
Power - Max	300 mW
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-A1

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