STP08IE120F4 Details_STP08IE120F4 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Special Purpose

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Specifications

Description	Details
Series	ESBT®
Package	Tube
Transistor Type	NPN - Emitter Switched Bipolar
Applications	Gate Driver
Voltage - Rated	1200V (1.2kV)
Current Rating (Amps)	8A
Mounting Type	Through Hole
Package / Case	TO-220-4 Full Pack
Supplier Device Package	TO-220FP

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