NLAS4783MN1R2G Details_NLAS4783MN1R2G PDF Document_ON Semiconductor-Galaxy Core City

Multiplexers、 Demultiplexers

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Specifications

Description	Details
Series	-
Package	Bulk
Switch Circuit	SPDT
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	3
On-State Resistance (Max)	1Ohm
Channel-to-Channel Matching (ΔRon)	400mOhm (Max)
Voltage - Supply, Single (V+)	1.65V ~ 4.5V
Voltage - Supply, Dual (V±)	-
Switch Time (Ton, Toff) (Max)	27ns, 20ns
-3db Bandwidth	17MHz
Charge Injection	50pC
Channel Capacitance (CS(off), CD(off))	5pF
Current - Leakage (IS(off)) (Max)	500nA
Crosstalk	-62dB @ 100kHz
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	16-VFQFN Exposed Pad
Supplier Device Package	16-QFN (3x3)

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