NLAS6233MUTBG Details_NLAS6233MUTBG PDF Document_ON Semiconductor-Galaxy Core City

Multiplexers、 Demultiplexers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Switch Circuit	DPDT
Multiplexer/Demultiplexer Circuit	2:2
Number of Circuits	2
On-State Resistance (Max)	550mOhm
Channel-to-Channel Matching (ΔRon)	190mOhm
Voltage - Supply, Single (V+)	2.7V ~ 4.5V
Voltage - Supply, Dual (V±)	-
Switch Time (Ton, Toff) (Max)	17ns, 9ns
-3db Bandwidth	36MHz
Charge Injection	-
Channel Capacitance (CS(off), CD(off))	45pF
Current - Leakage (IS(off)) (Max)	1µA
Crosstalk	-98dB @ 100kHz
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	10-UFQFN
Supplier Device Package	10-UQFN (1.4x1.8)

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