NLAS4685FCT1G Details_NLAS4685FCT1G PDF Document_ON Semiconductor-Galaxy Core City

Multiplexers、 Demultiplexers

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Specifications

Description	Details
Series	-
Package	Bulk
Switch Circuit	SPDT
Multiplexer/Demultiplexer Circuit	2:1
Number of Circuits	2
On-State Resistance (Max)	800mOhm
Channel-to-Channel Matching (ΔRon)	60mOhm
Voltage - Supply, Single (V+)	1.8V ~ 5.5V
Voltage - Supply, Dual (V±)	-
Switch Time (Ton, Toff) (Max)	30ns, 25ns
-3db Bandwidth	11.5MHz
Charge Injection	20pC
Channel Capacitance (CS(off), CD(off))	208pF, 102pF
Current - Leakage (IS(off)) (Max)	1µA
Crosstalk	-81dB @ 100kHz
Operating Temperature	-55°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	10-UFBGA, FCBGA
Supplier Device Package	10-Microbump (1.97x1.47)

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