CY7C1059DV33-12ZSXQT Details_CY7C1059DV33-12ZSXQT PDF Document_Cypress Semiconductor Corp-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Asynchronous
Memory Size	8Mb (1M x 8)
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	12ns
Access Time	12 ns
Voltage - Supply	3V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package	44-TSOP II

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