S26KS512SDABHM030 Details_S26KS512SDABHM030 PDF Document_Cypress Semiconductor Corp-Galaxy Core City

Memory

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Specifications

Description	Details
Series	Automotive, AEC-Q100, HyperFlash™ KS
Package	Tray
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	512Mb (64M x 8)
Memory Interface	Parallel
Clock Frequency	100 MHz
Write Cycle Time - Word, Page	-
Access Time	96 ns
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	24-VBGA
Supplier Device Package	24-FBGA (6x8)

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