S26KS512SDABHM030 Details_S26KS512SDABHM030 PDF Document_Cypress Semiconductor Corp-Galaxy Core City

Memory

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,874(Ref. price)

Qty.	Unit Price	Ext. Price
1	$18.15450	$18.15450

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	Automotive, AEC-Q100, HyperFlash™ KS
Package	Tray
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	512Mb (64M x 8)
Memory Interface	Parallel
Clock Frequency	100 MHz
Write Cycle Time - Word, Page	-
Access Time	96 ns
Voltage - Supply	1.7V ~ 1.95V
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	24-VBGA
Supplier Device Package	24-FBGA (6x8)

Other

Price advantage, S26KS512SDABHM030 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
93LC56BT-E/MNY	Microchip Technology	Memory	Datasheet	IC EEPROM 2KBIT SPI 2MHZ 8TDFN	$0.35640	In Stock:2176
CY7C1049BV33-20VC	Cypress Semiconductor Corp	Memory	Datasheet	IC SRAM 4MBIT PARALLEL 36SOJ	$7.45920	In Stock:5377
HN58X24256FPI#S0	Renesas Electronics America Inc	Memory	Datasheet	TWO-WIRE SERIAL INTERFACE 256K E	$4.03920	In Stock:13082
CY7C0241E-15AXCT	Cypress Semiconductor Corp	Memory	Datasheet	IC SRAM 72KBIT PARALLEL 100TQFP	No price	In Stock:17564
W9412G6IH-5	Winbond Electronics	Memory	Datasheet	IC DRAM 128MBIT PAR 66TSOP II	No price	In Stock:17568