Hello! Welcome to Galaxy Core City Sign in Register

Catalogues

Memory

The picture is for reference only

  • Share:

MT29E4T08EYHBBG9-3ES:B

Please fill in the inquiry information for purchasing and consulting products
PartName*Quantity*Batch NumberPackageManufacturerOther requirements
Please fill in the contact details and reply to you in 3 minutes
  • *Name:
  • *Tel:
  • *Company:
  • *Email:
In Stock:18,878(Ref. price)
Qty.Unit PriceExt. Price
No price, please contact inquiry
Documents
Specifications
DescriptionDetails
Series
-
Package
Tray
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
4Tb (512G x 8)
Memory Interface
Parallel
Clock Frequency
333 MHz
Write Cycle Time - Word, Page
-
Access Time
-
Voltage - Supply
2.5V ~ 3.6V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Other
Price advantage, MT29E4T08EYHBBG9-3ES:B is available in stock and can be delivered on the same day
Recommended Product
Product PicturesPart NoManufacturerProduct CategoryDatasheetDescriptionReference priceQuantity
Memory
IC EEPROM 8KBIT SPI 1MHZ 8SOP
No price
In Stock:17150
Memory
IC DRAM 256MBIT PAR 54TSOP II
No price
In Stock:17152
Memory
IC FLASH 256GBIT PAR 48TSOP I
No price
In Stock:17154
Memory
IC SRAM 1MBIT PARALLEL 32TSOP I
No price
In Stock:17156
Memory
IC FLASH RAM 2GBIT PAR 137TFBGA
No price
In Stock:17158
  • One-stop shop
  • Authentic guarantee
  • Price advantage
  • Quick delivery

Shenzhen Bohaotong Technology Co., Ltd

Tel: 0755-82811430

Phone: 15989349634

Fax: 0755-82818458

Email: Anna@bhtkj.com

skype:bhtkj@hotmail.com

Address: 808, Block A, Huaqiangbei Baohua Building, Futian District, Shenzhen


Wechat

Copyright © 2015-2024 Shenzhen Bohaotong Technology Co., Ltd 粤ICP备10033542号 pay