BR25G512FJ-3GE2 Details_BR25G512FJ-3GE2 PDF Document_Rohm Semiconductor-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Non-Volatile
Memory Format	EEPROM
Technology	EEPROM
Memory Size	512Kb (64K x 8)
Memory Interface	SPI
Clock Frequency	10 MHz
Write Cycle Time - Word, Page	5ms
Access Time	-
Voltage - Supply	1.8V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP-J

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