IDT70P3337S250RM Details_IDT70P3337S250RM PDF Document_Renesas Electronics America Inc-Galaxy Core City

Memory

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,150(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Dual Port, Synchronous QDR II
Memory Size	9Mb (512K x 18)
Memory Interface	Parallel
Clock Frequency	250 MHz
Write Cycle Time - Word, Page	-
Access Time	6.3 ns
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	576-BBGA, FCBGA
Supplier Device Package	576-FCBGA (25x25)

Other

Price advantage, IDT70P3337S250RM is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
S29JL032J70TFI310	Cypress Semiconductor Corp	Memory	Datasheet	IC FLASH 32MBIT PARALLEL 48TSOP	$3.77280	In Stock:17320
AT28C256F-15TU-T	Microchip Technology	Memory	Datasheet	IC EEPROM 256KBIT PAR 28TSOP	$9.52320	In Stock:792
S34MS01G200BHB003	Cypress Semiconductor Corp	Memory	Datasheet	IC FLASH 1GBIT PARALLEL 63BGA	No price	In Stock:17324
IS61NLF12836A-7.5TQLI	ISSI, Integrated Silicon Solution Inc	Memory	Datasheet	IC SRAM 4.5MBIT PARALLEL 100TQFP	$8.29765	In Stock:17326
M95128-DRMN3TP/K	STMicroelectronics	Memory	Datasheet	IC EEPROM 128KBIT SPI 20MHZ 8SO	$0.78210	In Stock:17328