IDT70P3517S250RM Details_IDT70P3517S250RM PDF Document_Renesas Electronics America Inc-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tray
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Dual Port, Synchronous QDR II
Memory Size	9Mb (256K x 36)
Memory Interface	Parallel
Clock Frequency	250 MHz
Write Cycle Time - Word, Page	-
Access Time	6.3 ns
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	576-BBGA, FCBGA
Supplier Device Package	576-FCBGA (25x25)

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