71016S12YG8 Details_71016S12YG8 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Asynchronous
Memory Size	1Mb (64K x 16)
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	12ns
Access Time	12 ns
Voltage - Supply	4.5V ~ 5.5V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package	44-SOJ

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