BR25S640FVT-WE2 Details_BR25S640FVT-WE2 PDF Document_Rohm Semiconductor-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Non-Volatile
Memory Format	EEPROM
Technology	EEPROM
Memory Size	64Kb (8K x 8)
Memory Interface	SPI
Clock Frequency	20 MHz
Write Cycle Time - Word, Page	5ms
Access Time	-
Voltage - Supply	1.7V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP-B

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