NV25160DWHFT3G Details_NV25160DWHFT3G PDF Document_ON Semiconductor-Galaxy Core City

Memory

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Specifications

Description	Details
Series	Automotive, AEC-Q100
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Non-Volatile
Memory Format	EEPROM
Technology	-
Memory Size	16Kb (2K x 8)
Memory Interface	SPI
Clock Frequency	10 MHz
Write Cycle Time - Word, Page	4ms
Access Time	40 ns
Voltage - Supply	2.5V ~ 5.5V
Operating Temperature	-40°C ~ 150°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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