LE25S40AFDTWG Details_LE25S40AFDTWG PDF Document_ON Semiconductor-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH
Memory Size	4Mb (512K x 8)
Memory Interface	SPI
Clock Frequency	40 MHz
Write Cycle Time - Word, Page	1ms
Access Time	-
Voltage - Supply	1.65V ~ 1.95V
Operating Temperature	-40°C ~ 90°C (TA)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-VSOIC

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