GD25Q80EEIGR Details_GD25Q80EEIGR PDF Document_GigaDevice Semiconductor (HK) Limited-Galaxy Core City

Memory

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR
Memory Size	8Mb (1M x 8)
Memory Interface	SPI - Quad I/O
Clock Frequency	133 MHz
Write Cycle Time - Word, Page	70µs, 2ms
Access Time	7 ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	8-XFDFN Exposed Pad
Supplier Device Package	8-USON (3x2)

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