NCP303150MNTWG Details_NCP303150MNTWG PDF Document_ON Semiconductor-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Half-Bridge, Low-Side
Channel Type	Single
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	4.5V ~ 5.5V
Logic Voltage - VIL, VIH	0.65V, 2.7V
Current - Peak Output (Source, Sink)	100mA, 100mA
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	30 V
Rise / Fall Time (Typ)	17ns, 26ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	39-PowerVFQFN
Supplier Device Package	39-PQFN (5x6)

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