ISL89160FBEBZ Details_ISL89160FBEBZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Low-Side
Channel Type	Independent
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	4.5V ~ 16V
Logic Voltage - VIL, VIH	1.85V, 3.15V
Current - Peak Output (Source, Sink)	6A, 6A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	20ns, 20ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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