ISL6613AECBZ Details_ISL6613AECBZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Half-Bridge
Channel Type	Synchronous
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	10.8V ~ 13.2V
Logic Voltage - VIL, VIH	-
Current - Peak Output (Source, Sink)	1.25A, 2A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	36 V
Rise / Fall Time (Typ)	26ns, 18ns
Operating Temperature	0°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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