L6389EDTR Details_L6389EDTR PDF Document_STMicroelectronics-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	17V (Max)
Logic Voltage - VIL, VIH	1.1V, 1.8V
Current - Peak Output (Source, Sink)	400mA, 650mA
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	70ns, 40ns
Operating Temperature	-45°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	-

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