HIP2101EIBZT Details_HIP2101EIBZT PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	9V ~ 14V
Logic Voltage - VIL, VIH	0.8V, 2.2V
Current - Peak Output (Source, Sink)	2A, 2A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	114 V
Rise / Fall Time (Typ)	10ns, 10ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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