IXDD609SI Details_IXDD609SI PDF Document_IXYS Integrated Circuits Division-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Low-Side
Channel Type	Single
Number of Drivers	1
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 3V
Current - Peak Output (Source, Sink)	9A, 9A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	22ns, 15ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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