LTC4449EDCB Details_LTC4449EDCB PDF Document_Analog Devices Inc.-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Half-Bridge
Channel Type	Synchronous
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	4V ~ 6.5V
Logic Voltage - VIL, VIH	3V, 6.5V
Current - Peak Output (Source, Sink)	3.2A, 4.5A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	42 V
Rise / Fall Time (Typ)	8ns, 7ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-WFDFN Exposed Pad
Supplier Device Package	8-DFN (2x3)

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