HIP2123FRTBZ Details_HIP2123FRTBZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	8V ~ 14V
Logic Voltage - VIL, VIH	1.4V, 2.2V
Current - Peak Output (Source, Sink)	2A, 2A
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	114 V
Rise / Fall Time (Typ)	10ns, 10ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	9-WDFN Exposed Pad
Supplier Device Package	9-TDFN (4x4)

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