TC4422ESM713 Details_TC4422ESM713 PDF Document_Microchip Technology-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Low-Side
Channel Type	Single
Number of Drivers	1
Gate Type	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 18V
Logic Voltage - VIL, VIH	0.8V, 2.4V
Current - Peak Output (Source, Sink)	9A, 9A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	60ns, 60ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package	8-SOIJ

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