EL7154CN Details_EL7154CN PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	High-Side or Low-Side
Channel Type	Synchronous
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	4.5V ~ 16V
Logic Voltage - VIL, VIH	0.6V, 2.4V
Current - Peak Output (Source, Sink)	4A, 4A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	4ns, 4ns
Operating Temperature	-40°C ~ 125°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-PDIP

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