MC33153P Details_MC33153P PDF Document_ON Semiconductor-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Low-Side
Channel Type	Single
Number of Drivers	1
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	11V ~ 20V
Logic Voltage - VIL, VIH	1.2V, 3.2V
Current - Peak Output (Source, Sink)	1A, 2A
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	17ns, 17ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-PDIP

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