HIP4083ABZ Details_HIP4083ABZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	High-Side
Channel Type	3-Phase
Number of Drivers	3
Gate Type	N-Channel MOSFET
Voltage - Supply	7V ~ 15V
Logic Voltage - VIL, VIH	1V, 2.5V
Current - Peak Output (Source, Sink)	-
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	95 V
Rise / Fall Time (Typ)	35ns, 30ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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