NCV33152DR2 Details_NCV33152DR2 PDF Document_ON Semiconductor-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Low-Side
Channel Type	Independent
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	6.1V ~ 18V
Logic Voltage - VIL, VIH	0.8V, 2.6V
Current - Peak Output (Source, Sink)	1.5A, 1.5A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	36ns, 32ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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