DGD21032S8-13 Details_DGD21032S8-13 PDF Document_Diodes Incorporated-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 2.5V
Current - Peak Output (Source, Sink)	290mA, 600mA
Input Type	Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	70ns, 35ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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