DGD21904S14-13 Details_DGD21904S14-13 PDF Document_Diodes Incorporated-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 2.5V
Current - Peak Output (Source, Sink)	4.5A, 4.5A
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	25ns, 20ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package	14-SO

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