NCP5901BEMNTBG Details_NCP5901BEMNTBG PDF Document_ON Semiconductor-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Bulk
Driven Configuration	Half-Bridge
Channel Type	Synchronous
Number of Drivers	2
Gate Type	N-Channel MOSFET
Voltage - Supply	4.5V ~ 13.2V
Logic Voltage - VIL, VIH	1V, 2V
Current - Peak Output (Source, Sink)	-
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	35 V
Rise / Fall Time (Typ)	16ns, 11ns
Operating Temperature	0°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-VFDFN Exposed Pad
Supplier Device Package	8-DFN (2x2)

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