IR21271S Details_IR21271S PDF Document_Infineon Technologies-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	High-Side or Low-Side
Channel Type	Single
Number of Drivers	1
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	9V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 3V
Current - Peak Output (Source, Sink)	250mA, 500mA
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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