L6571B Details_L6571B PDF Document_STMicroelectronics-Galaxy Core City

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Half-Bridge
Channel Type	Synchronous
Number of Drivers	2
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 16.6V
Logic Voltage - VIL, VIH	-
Current - Peak Output (Source, Sink)	170mA, 270mA
Input Type	RC Input Circuit
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-Mini DIP

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