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Transistor、Photovoltaic Output
H11A817BW Picture

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H11A817BW

  • ON Semiconductor
  • New
  • OPTOISO 5.3KV TRANSISTOR 4DIP
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Specifications
DescriptionDetails
Series
-
Package
Tube
Number of Channels
1
Voltage - Isolation
5300Vrms
Current Transfer Ratio (Min)
130% @ 5mA
Current Transfer Ratio (Max)
260% @ 5mA
Turn On / Turn Off Time (Typ)
-
Rise / Fall Time (Typ)
2.4µs, 2.4µs
Input Type
DC
Output Type
Transistor
Voltage - Output (Max)
70V
Current - Output / Channel
50mA
Voltage - Forward (Vf) (Typ)
1.2V
Current - DC Forward (If) (Max)
50 mA
Vce Saturation (Max)
200mV
Operating Temperature
-55°C ~ 100°C
Mounting Type
Through Hole
Package / Case
4-DIP (0.400", 10.16mm)
Supplier Device Package
4-DIP
Other
Price advantage, H11A817BW is available in stock and can be delivered on the same day
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