PT501 Details_PT501 PDF Document_Sharp Microelectronics-Galaxy Core City

Phototransistors

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Specifications

Description	Details
Series	-
Package	Tube
Voltage - Collector Emitter Breakdown (Max)	45 V
Current - Collector (Ic) (Max)	10 mA
Current - Dark (Id) (Max)	100 nA
Wavelength	800nm
Viewing Angle	12°
Power - Max	75 mW
Mounting Type	Through Hole
Orientation	Top View
Operating Temperature	-25°C ~ 125°C (TA)
Package / Case	TO-18-2 Metal Can

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