PT4800FBE00F Details_PT4800FBE00F PDF Document_Sharp Microelectronics-Galaxy Core City

Phototransistors

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Specifications

Description	Details
Series	-
Package	Tube
Voltage - Collector Emitter Breakdown (Max)	35 V
Current - Collector (Ic) (Max)	20 mA
Current - Dark (Id) (Max)	100 µA
Wavelength	860nm
Viewing Angle	70°
Power - Max	75 mW
Mounting Type	Through Hole
Orientation	Side View
Operating Temperature	-
Package / Case	Radial

Other

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