HN1C03FU-B,LF Details_HN1C03FU-B,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	300mA
Voltage - Collector Emitter Breakdown (Max)	20V
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	350 @ 4mA, 2V
Power - Max	200mW
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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