JANTXV2N2919U Details_JANTXV2N2919U PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/355
Package	Bulk
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	30mA
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 1mA, 5V
Power - Max	350mW
Frequency - Transition	-
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	3-SMD

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