ULQ2801A Details_ULQ2801A PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	8 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	2.25W
Frequency - Transition	-
Operating Temperature	-40°C ~ 105°C
Mounting Type	Through Hole
Package / Case	18-DIP (0.300", 7.62mm)
Supplier Device Package	18-DIP

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