UMZ8NTR Details_UMZ8NTR PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	150mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V, 12V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V / 270 @ 10mA, 2V
Power - Max	150mW
Frequency - Transition	180MHz, 260MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	UMT6

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